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一、引言金-硅面垒型探测器具有下列的特点:能量分辨率高;脉冲上升时间短;耗尽层宽度可调节,因而能甄别不同的射线;脉冲高度与能量之间的线性响应好;对γ射线、中子本底不灵敏,适于在γ射线、中子本底较高的情况下测量带电粒子;工艺简单,成本较低等等。因此,自1949年麦凯(K.G.McKay)首先利用半导体探测器探测射线以来,它在核辐射探测领域中得到了很大的发展。关于金-硅面垒型探测器的制作工艺、探测原理、性能和应用已有报导。
I. INTRODUCTION The gold-silicon surface barrier detector has the following characteristics: high energy resolution; short pulse rise time; adjustable depletion layer width, which can identify different rays; linear response between pulse height and energy is good ; For γ-ray, neutron background is not sensitive, suitable for γ-ray, neutron background measurement of charged particles higher; simple process, lower cost and so on. Therefore, since 1949, when M.G. McKay pioneered the use of semiconductor detectors to detect radiation, it has made great strides in the field of nuclear radiation detection. On the gold - silicon surface barrier detector of the production process, detection principle, performance and applications have been reported.