本文叙述的是一个全译码2048单元电可编程序只读存储器,它是用一种新的浮动栅雪崩注入MOS(FAMOS)电荷存储器件作为基本的非易失性存储单元实现的。这个存储器由8位的256字构成,和TTL完全相容,并且能够在静态或动态方式下工作。存储矩阵是用硅栅MOS工艺成功地制造的,并且得到了功能器件,其读出时间在静态工作方式是800 ns,在动态工作方式是500 ns。存储器芯片是用24引线双列直插式封装装配的。 This article describes a fully-decoded 2048-unit EEPROM that uses a new floating-gate avalanche-injected MOS (FAMOS) charge storage device as a basic nonvolatile memory cell. This memory consists of 8-bit 256 words, fully compatible with TTL, and can work in static or dynamic mode. The memory matrix was successfully fabricated using a silicon gate MOS process, and functional devices were obtained that read out at 800 ns in static mode and 500 ns in dynamic mode. The memory chip is assembled in a 24-lead dual in-line package.