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采用电化学沉积方法在n型InP(100)(1016)衬底上制备了氧化锌薄膜。探索线性扫描伏安法确定InP与0.1mol/LZn(NO3)2电解液的体系中沉积氧化锌的极化电势,在20℃溶液中,相对于甘汞电极(SCE)的极化电势为-1.1877V。扫描电镜照片显示:随着应用电势的降低,氧化锌薄膜变得紧密平滑;狭窄的X射线衍射峰也说明低电势下薄膜的结晶质量较好。光荧光表征发现低电势下制备的氧化锌薄膜具有良好的发光特性。
Zinc oxide films were deposited on n-type InP (100) (1016) substrates by electrochemical deposition. To investigate the potential of zinc oxide deposited in a system of InP and 0.1 mol / L Zn (NO3) 2 electrolyte by linear sweep voltammetry, the polarization potential of the deposited zinc oxide was 20 - 1.1877V. Scanning electron micrographs showed that the zinc oxide film became smooth and smooth with the decrease of applied potential. The narrow X-ray diffraction peak also showed that the film quality was good at low potential. Photo-fluorescence characterization showed that zinc oxide films prepared at low potential have good luminescence properties.