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在ITO导电玻璃基底上,采用二氰二胺分散在DMF(N,N-二甲基甲酰胺)中形成的溶液做沉积液,阴极电化学沉积了CNx薄膜。X射线光电子能谱(XPS)和傅立叶转换红外光谱(FTIR)的分析结果表明,沉积的CNx薄膜的N/C比为0.7左右,碳和氮主要以C-N、C=N的形式成键,有少量的碳和氮以C≡N的形式成键。拉曼光谱测试发现其存在多个吸收峰,对其进行分析的结果表明薄膜样品中含有α-C3N4和β-C3N4相的成分。电阻率测试表明,氮化碳薄膜的电阻率值达到1012～1013Ω·cm。
On the ITO conductive glass substrate, a solution of dicyandiamide dispersed in DMF (N, N-dimethylformamide) was used as the deposition solution, and the cathode was electrochemically deposited on the CNx thin film. The results of XPS and FTIR showed that the N / C ratio of deposited CNx film was about 0.7, and the carbon and nitrogen were mainly in the form of CN and C = N, with Small amounts of carbon and nitrogen form C≡N bonds. Raman spectroscopy test found that there are multiple absorption peaks, the results of their analysis showed that the film samples contain α-C3N4 and β-C3N4 phase composition. The resistivity test shows that the resistivity of the carbon nitride film reaches 1012 ~ 1013Ω · cm.