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In this paper, the GaN based epitaxial wafer is fabricated on big 1 mmx1 mm chips, and packaged with a special technology. At working current 350 mA and working voltage 3.74 V, the full viewing angle, the axial brightness and the output integral power of the 465 nm LED can reach 125? 210, 000 cd/m2 and 1.5 1m, respectively. The LED with such good performances has promising application potential in the fields of display, traffic and the development of solid-state white light source.
At this current, the GaN based epitaxial wafer is fabricated on a 1 mm × 1 mm chips, and packaged with a special technology. At working current 350 mA and working voltage 3.74 V, the full viewing angle, the axial brightness and the output integral power of The 465 nm LED can reach 125? 210,000 cd / m2 and 1.5 1 m, respectively. The LED with such good performances has promising application potential in the fields of display, traffic and the development of solid-state white light source.