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以Sm(Co0.62Fe0.25Cu0.1Zr0.03)7.5合金为靶材,采用磁控溅射工艺在单晶Si基片上沉积了SmCo基永磁薄膜。研究了溅射工艺参数对薄膜的晶体结构、微观结构和磁性能的影响。结果表明:溅射气压和溅射功率的改变引起了永磁相变,这主要依赖于溅射工艺条件对薄膜Sm含量的影响。高的溅射压强和溅射功率都会引起薄膜晶粒的粗大化和薄膜表面的粗糙化。薄膜的晶体结构和微观结构随溅射参数的变化决定了薄膜的面内磁学行为。当溅射压强为0.3 Pa和溅射功率为5.1 W/cm2时,制备的退火态SmCo基薄膜为TbCu7单相晶体结构,其面内永磁性能良好。
Sm (Co0.62Fe0.25Cu0.1Zr0.03) 7.5 alloy was used as a target to deposit SmCo-based permanent magnet film on single-crystal Si substrate by magnetron sputtering. The effects of sputtering parameters on the crystal structure, microstructure and magnetic properties of the films were investigated. The results show that the change of sputtering pressure and sputtering power causes the permanent magnetic phase transition, which mainly depends on the influence of the sputtering process conditions on the Sm content of the film. High sputtering pressure and sputtering power will cause the film grain coarsening and film surface roughening. The crystal structure and microstructure of the film change with the sputtering parameters determine the in-plane magnetic behavior of the film. When the sputtering pressure is 0.3 Pa and the sputtering power is 5.1 W / cm2, the as-prepared SmCo-based thin film is TbCu7 single-phase crystal structure with good in-plane permanent magnetism.