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调查了-140℃到+375℃温度范围内RCA CD4007A集成电路的商品生产工艺、Z工艺和J工艺中的辐射损伤退火。在-140℃的辐射之后分析了回火曲线,以求出热退火的激活能。结果发现,在-140℃下所有三种工艺中辐射引起的阈电压偏移都是一样的。Z和J工艺的辐射加固主要是由于室温下辐射损伤的迅速热退火。在-140℃到20℃的范围内,没有看到与掺杂剂有关的电荷俘获,这种情况与在更高温度下观察到的情况相同,在1MeV电子辐射之后、无偏压Z工艺n沟中有相当多的负电荷留在栅氧化物里。
The commercial production of RCA CD4007A integrated circuits from -140 ° C to + 375 ° C was investigated, and the radiation damage anneal in Z-process and J-process was investigated. The tempering curve was analyzed after -140 ° C radiation to find the activation energy for thermal annealing. It was found that the radiation induced threshold voltage shift was the same for all three processes at -140 ° C. Radiation hardening of Z and J processes is mainly due to rapid thermal annealing of radiation damage at room temperature. No charge trapping related to dopants was seen in the range of -140 ° C to 20 ° C, as is the case observed at higher temperatures, after a 1 MeV electron beam irradiation, an unbiased Z process n There is quite a bit of negative charge remaining in the gate oxide.