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MOS存储器的高集成度就产品的水平来讲仍然继续以4倍/3年的比例增长。从维持该局面的技术准备情况来看,预计目前这种发展趋势还将继续下去。众所周知,带动这种高集成化技术的牵引车是动态NMOS存储器。动态存储器产品研究重心已开始从16K转向64K。用户强烈希望64K能在IBM公司的新系列中得到应用。但长期以来,半导体厂家并没有满足用户们的这一愿望。其主要原因除了需要微细加工技术的制造工艺和软误差等问题外,还需要考虑所谓的电源电压问题。开始的
The high level of integration of MOS memory continues to grow at a 4x / 3-year rate at the product level. Judging from the technical preparations for maintaining this situation, it is expected that the current development trend will continue. As we all know, to promote this highly integrated technology tractor is dynamic NMOS memory. The focus of dynamic memory product research has shifted from 16K to 64K. Users strongly expect the 64K to be used in the new IBM series. But for a long time, semiconductor manufacturers did not meet the user's desire. The main reason for this is that in addition to the manufacturing process and soft errors that require microfabrication techniques, so-called power supply voltage issues need to be considered. The beginning