高速化、高集成化的迅猛发展把微细加工技术推向更加重要的位置,能进行微细加工的半导体设备不断出现,尤以光刻技术为最,其进展之快也是惊人的。历来都是采用光掩模和片子接触曝光法,近期出现了使用正性抗蚀剂的1:1投影曝光方法。但是,要制造设计规则为2微米以下的半导体器件,使用以往的光刻机,无论是分辨率还是对准精度都难于实 The rapid development of high-speed, high-integration The micro-processing technology to a more important position, capable of micro-processing of semiconductor devices continue to emerge, especially lithography as the most rapid progress is amazing. Traditionally, photomasks and film contact exposures have been used and a 1: 1 projection exposure method using positive resist has recently emerged. However, to manufacture a semiconductor device having a design rule of 2 micrometers or less, it is difficult to realize resolution and alignment accuracy using the conventional lithography apparatus