论文部分内容阅读
结合双/多曝光的193nm投影光刻是未来5~10年大规模集成电路工业化生产的主要方法.投影物镜作为光刻机的核心分系统,其光机系统关键技术的研究进展直接影响物镜整体性能的提升.本文分析了当前集成电路装备制造业对193nm投影物镜的需求,阐述了曝光系统设计、光学元件被动支撑、位姿调节、主动变形、元件更换和系统数值孔径调节等物镜光机系统关键技术研究现状,提炼了阻碍物镜未来发展的关键科学技术问题.目前,193nm光刻物镜尚需进一步阐明高阶热像差的产生机理和校正策略,解决多自由度位姿标定问题,形成完备的物镜研制方法,指导高成像质量物镜的制造.
The combination of double / multi-exposure 193nm lithography is the main method of industrial production of large scale integrated circuits in the next 5-10 years.As the core subsystem of lithography machine, projection objective has a direct impact on the whole objective Performance.This paper analyzes the current demand for 193nm projection lens in integrated circuit equipment manufacturing industry, and expounds the characteristics of exposure system design, passive support of optical components, attitude adjustment, active deformation, component replacement and system numerical aperture adjustment Key technology research status quo, refining the key science and technology obstruct the future development of the objective lens.At present, 193nm lithography objective still need to further clarify the high-order thermal aberration generation mechanism and correction strategy to solve multi-degree of freedom pose calibration, the formation of a complete The development of the objective lens to guide the manufacture of high-quality objective lens.