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我们用光加热低压金属有机物化学气相淀积方法在α－Ａｌ２Ｏ３衬底上成功地外延生长出高质量的纤锌矿结构ＧａＮ．生长温度约９５０℃，比普通射频加热的ＬＰ－ＭＯＣＶＤ生长温度低１００℃．外延层（０００２）晶面Ｘ射线摇摆曲线半高宽（ＦＷＨＭ）为９．８′．光致发光谱（ＰＬ）有很强的带边发射，没有观察到“黄带”发射．范德堡法霍耳测量表明样品载流子浓度为１．７１×１０１８ｃｍ－３，霍耳迁移率为１２１．５ｃｍ２／（Ｖ·ｓ）．结果表明，光辐射有利于增加生长过程中ＮＨ３的分解，并有利于抑制寄生反应，从而降低生长温度，提高样品质量．
We have successfully epitaxially grown high-quality wurtzite GaN on α-Al2O3 substrates by means of light-heated low-pressure metal-organic chemical vapor deposition. The growth temperature is about 950 ° C, which is 100 ° C lower than the growth temperature of LP-MOCVD heated by ordinary radio frequency. The full width at half maximum (FWHM) of the X-ray rocking curve of epitaxial layer (0002) is 9.8 ’. Photoluminescence (PL) has a strong edge emission, no “yellow band” emission observed. The Vanderbilt Fahr measurement showed a carrier concentration of 1.71 × 10 18 cm -3 and a Hall mobility of 121.5 cm 2 / (V · s). The results show that light irradiation is beneficial to increase the decomposition of NH3 during growth, and to suppress the parasitic reaction, thus reducing the growth temperature and improving the sample quality.