论文部分内容阅读
本文描述了一种微电子工艺制造中的切割曝光技术，用这一技术在一台Ｇ线投影曝光机上制备出深亚微米图形．由此进一步研制成功０．２５μｍＰ＋多晶硅栅表面沟ＰＭＯＳＦＥＴ，它具有良好的器件特性和抵制短沟道效应的能力．对不同沟长ＮＭＯＳ和ＰＭＯＳＦＥＴ的研究表明，当沟道长度从２．０μｍ降至０．５μｍ时，表面沟ＰＭＯＳ管阈值电压的变化（ΔＶＴ）约为６０ｍＶ，而ＮＭＯＳ管相应ΔＶＴ为１１０ｍＶ．计算机模拟的切割曝光和单线曝光立体图象也清楚地表明，切割曝光方法对于消除二次谐波影响，提高分辨率具有一定作用．
This article describes a cutting exposure technique used in the fabrication of microelectronics to produce deep sub-micron patterns on a G-line projection exposure machine. This further development succeeded 0.25μmP + polysilicon gate surface trench PMOSFET, it has good device characteristics and resistance to short-channel effect. The study of different trench length NMOS and PMOSFET shows that when the channel length is reduced from 2.0μm to 0.5μm, the variation of the threshold voltage (ΔVT) of the surface trench PMOS is about 60mV while the corresponding ΔVT of NMOS is 110mV. Computer simulation of the cutting exposure and single-exposure stereoscopic images also clearly show that the cutting exposure method for eliminating the influence of the second harmonic, improve the resolution has a role.