The electron states confined in wurtzite InxGa1-xN/GaN strained quantum dots (QDs) have been investigated in the effective-mass approximation by solving the Schrdinger equation,in which parabolic confined potential and strong built-in electric field effect (due to the piezoelectricity and spontaneous polarization) have been taken into account. The real part Re χ (3)(0,0,ω )and the imaginary part Im χ (3)(0,0,ω ) of the third-order susceptibility describe quadratic electro-optic effects and electro-absorption process of the QDs respectively. And both of them have been calculated in directions parallel and vertical to z axis. Furthermore,the study shows Re χ (3)(0,0,ω ) and Im χ (3)(0,0,ω ) increase under resonant conditions with the QDs’ radius and height increase,and the same results occur when the content increase. In addition,the resonant position shift to the lower energy region when the parabolic frequencies increase. The electron states confined in wurtzite InxGa1-xN / GaN strained quantum dots (QDs) have been investigated in the effective-mass approximation by solving the Schrödinger equation, in which parabolic confined potential and strong built-in electric field effect (due to the real part Re χ (3) (0,0, ω) and the imaginary part Im χ (3,0 (0,0, ω) of the third-order susceptibility describe quadratic electro-optic effects and electro-absorption process of the QDs respectively. And both of them have been calculated in directions parallel and vertical to z axis. Further, the study shows Re χ (3) (0,0, ω) and Im χ (3) (0,0, ω) increase under resonant conditions with the QDs’ radius and height increase, and the same result occurs when the content increase. In addition, the resonant position shift to the lower energy region when the parabolic frequencies increase