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随着第三代半导体GaN器件技术的不断发展,GaN高电子迁移率晶体管(HEMT)功率器件在电子系统中逐步得到了广泛应用。GaN功率器件具有工作效率高、功率密度大和击穿场强高的特点,非常适合用于大功率、连续波功率放大器设计。基于GaN功率器件大信号模型,采用Microwave Office 2009微波设计软件对功率放大器进行仿真优化,设计并研制出了C波段高效率30 W连续波功率放大器。该放大器功率器件采用了CREE公司C波段GaN HEMT功率器件,实现放大器尺寸为190 mm×50 mm×15 mm,端口阻抗为50Ω。放大器在5 650~5 950 MHz频带内、28 V工作条件下,连续波输出功率大于30 W,增益大于45 dB,效率大于30%。
With the continuous development of the third generation semiconductor GaN device technology, GaN high electron mobility transistor (HEMT) power devices are gradually being widely used in electronic systems. GaN power devices with high efficiency, high power density and high breakdown strength characteristics, ideal for high-power, continuous wave power amplifier design. Based on the large-signal model of GaN power device, Microwave Office 2009 microwave design software was used to simulate and optimize the power amplifier. A C-band high efficiency 30 W CW power amplifier was designed and developed. The amplifier power device uses a CREE C-band GaN HEMT power device to achieve the amplifier size of 190 mm × 50 mm × 15 mm, the port impedance of 50Ω. In the frequency band 5 650 ~ 5 950 MHz, the output power of the continuous wave is greater than 30 W at 28 V. The gain is greater than 45 dB and the efficiency is greater than 30%.