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制备了结构为铟锡氧化物(ITO)/NPB/插入层/Alq/LiF/Al的有机电致发光(EL)器件,测量了器件发光随电压变化的光谱和电压-电流-亮度特性,观察到这种结构器件在电压升高的过程中总是在某电压附近有一个光谱、亮度和效率等性能突变的不可逆过程,这是由于在发光区域附近的纳米薄层材料将导致电荷在该区域的局部聚集,并引起该薄层材料局部破坏。这一失效的机制表明,尽管在器件制备过程中可能需要在器件中使用几纳米厚的有机层,但是应当考虑尽量避免,以使器件内载流子分布合理,避免此类失效过程发生。
The organic electroluminescence (EL) device with the structure of ITO / NPB / Alq / LiF / Al was fabricated and the spectral and voltage-current-luminance characteristics of the devices were measured. To the structure of the device in the process of voltage increase is always a voltage near a sudden change in performance such as spectral, brightness and efficiency irreversible process, which is due to the thin layer of light near the nano-thin layer of material will lead to charge in the region Of the local aggregation, and cause local damage to the thin layer of material. This failure mechanism shows that while it may be necessary to use a few nanometers thick organic layer in the device during device fabrication, this failure should be considered as much as possible so that carrier distribution within the device is reasonable and avoid such failure processes.