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Zn3N2是一种宽带隙半导体材料,在温度高于400°C氧化可生成p型ZnO:N,p型ZnO:N在电子学和光电子学领域有广泛的应用.在NH3-Ar气氛下,用RF磁控溅射金属Zn靶在玻璃衬底上室温制备了Zn3N2薄膜.用紫外-可见分光光度计、X射线衍射仪、X射线光电子谱分析仪、荧光分光光度计对Zn3N2薄膜的光学透过、光学吸收、结构、化学键态和光致发光进行了测量,研究了NH3分压对Zn3N2薄膜的结构和光学特性的影响.XRD分析表明Zn3N2薄膜呈现多晶结构,具有(321)择优取向,Zn3N2(321)衍射峰强度随NH3分压增加而增强.在NH3分压5%～10%制备的Zn3N2薄膜有较低透过率,透过率随NH3分压增加而提高.Zn3N2薄膜是间接带隙半导体,当NH3分压从5%变化到25%时,光学带隙从2.33eV升高到2.70eV.XPS分析表明Zn3N2薄膜在潮湿空气中容易水解.室温下Zn3N2薄膜在437nm和459nm波长出现了发光峰.
Zn3N2 is a kind of wide bandgap semiconductor material that can be oxidized to p type ZnO: N at temperatures higher than 400 ° C. P-type ZnO: N is widely used in electronics and optoelectronics. In NH3-Ar atmosphere, RF Zn3N2 thin films were prepared by magnetron sputtering metal Zn target at room temperature on glass substrates.The optical transmission of Zn3N2 thin films was investigated by UV-visible spectrophotometer, X-ray diffraction, X-ray photoelectron spectroscopy and fluorescence spectrophotometer , Optical absorption, structure, chemical bond state and photoluminescence were measured.The effects of NH3 partial pressure on the structure and optical properties of Zn3N2 thin films were investigated.The XRD results showed that the Zn3N2 thin films showed polycrystalline structure with (321) preferred orientation and Zn3N2 321) diffraction peaks intensify with the increase of NH3 partial pressure.The Zn3N2 thin films prepared with NH3 partial pressure of 5% ~ 10% have lower transmittance and the transmittance increases with the increase of partial pressure of NH3.The Zn3N2 thin films are indirect band gap Semiconductor, the optical bandgap increases from 2.33eV to 2.70eV when the partial pressure of NH3 changes from 5% to 25% .XPS analysis shows that the Zn3N2 films are easily hydrolyzed in moist air. The Zn3N2 films appear at 437nm and 459nm at room temperature Luminescence peak.