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采用动电位极化(PDS)、电化学阻抗谱(EIS)、电容测量以及阵列电极等技术研究了Cu的短期贮存对其腐蚀电化学行为的影响。结果表明,金属Cu表面膜呈现p型半导体结构,经过短期贮存后载流子浓度减小,腐蚀电位正移,腐蚀电流密度下降,表面膜对腐蚀阴极过程、阳极过程均有抑制作用。Cu在NaCl液滴下呈现典型的局部腐蚀特征;经过贮存后,电极表面润湿性减弱,腐蚀活性降低,总体平均腐蚀强度减弱,但是局部腐蚀强度反而增强。
The effects of short-term storage of Cu on the electrochemical behaviors of Cu were studied by using potentiodynamic polarization (PDS), electrochemical impedance spectroscopy (EIS), capacitance measurement and array electrodes. The results show that the Cu film on the surface of the metal presents a p-type semiconductor structure. After short-term storage, the carrier concentration decreases, the corrosion potential moves forward, the corrosion current density decreases, and the surface film inhibits the corrosion cathode process and the anode process. Cu showed typical local corrosion characteristics under NaCl droplet. After storage, the wettability of electrode decreased, the corrosion activity decreased, and the overall average corrosion strength decreased, but the local corrosion strength increased instead.