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研究了ＭｇＯ掺杂对ＺｎＯ压敏电阻电性能的影响。结果表明，ＭｇＯ含量增加，压敏场强Ｅ１ｍａ＝Ｖ１ｍＡ／ｄ上升，通流能力增强，非线性指数α和漏电流ＩＬ变化不大。文中还对上述结果进行了理论分析。
The effect of MgO doping on the electrical properties of ZnO varistors was investigated. The results show that the MgO content increases, the voltage-sensitive field strength E1ma = V1mA / d increases, the flow capacity increases, the nonlinear index α and the leakage current IL changes little. The article also made a theoretical analysis of the above results.