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石墨烯独特的结构和性能使其在纳米电子、半导体器件等领域成为研究的热点,但其零带隙的特性严重限制了其应用。采用化学气化沉积法制备了多层石墨烯,并使用溴蒸汽对制备的多层石墨烯进行掺杂,分析研究了溴蒸汽化学掺杂对石墨烯带隙的影响。为了对比溴蒸汽掺杂对石墨烯带隙的影响,使用633nm He-Ne光分别测量了石墨烯掺杂前和掺杂后的拉曼光谱,根据拉曼光谱计算了石墨烯费米能级移动与掺杂溴蒸汽之间的关系。实验结果表明:溴蒸汽掺杂对石墨烯拉曼光谱G带产生影响;随着掺杂溴蒸汽体积的增加,拉曼光谱G带向高频移动并逐渐趋于稳定;G带和2D带强度比也迅速增加,并最终趋于稳定。费米能级的移动与G峰位置成线性关系,利用G峰峰值位置与费米能级实验关系式计算了溴掺杂后石墨烯的费米能级,分析了化学掺杂对石墨烯带隙的影响。
The unique structure and properties of graphene make it a hot spot in the field of nanoelectronics and semiconductor devices. However, its zero bandgap characteristic severely limits its application. Multilayer graphene was prepared by chemical vapor deposition, and the multilayer graphene was doped with bromine vapor. The influence of bromine vapor chemical doping on the band gap of graphene was analyzed. In order to compare the effect of bromine vapor doping on the band gap of graphene, the Raman spectra of graphene before and after doping were measured by 633nm He-Ne light, and the Fermi level of graphene was calculated according to Raman spectra Relationship with doped bromine vapor. The experimental results show that the bromine vapor doping affects the G band of Raman spectra of graphene. With the increase of the volume of doping bromine vapor, the G band of the Raman spectrum moves toward high frequency and gradually becomes stable. The G band and the intensity of the 2D band The ratio also increased rapidly and eventually stabilized. The Fermi level shifts linearly with the position of G peak. The Fermi level of graphene after bromine doping was calculated by using the experimental relationship between the peak position of G peak and the Fermi level. The effect of chemical doping on the graphene band The impact of the gap.