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本文从有限扩散模型出发,结合相图,计算了Ga_(0.47)In_(0.53)As材料液相外延时三种冷却工艺生长的外延层厚度与生长时间的关系.给出了过冷工艺的外延层厚度与过冷温度、冷却速率关系的理论曲线,与实验数据基本相符.讨论了影响外延层厚度的因素,获得了器件级外延层生长的择优工艺条件.
Based on the finite diffusion model and the phase diagram, the relationship between the epitaxial layer thickness and the growth time of the three kinds of cooling processes during the liquid phase epitaxy of Ga 0.47 In 0.53 As is calculated. The theoretical curves of the relationship between the thickness of the epitaxial layer and the supercooling temperature and the cooling rate are in good agreement with the experimental data.The factors that affect the thickness of the epitaxial layer are discussed and the optimum technological conditions for the growth of the device-level epitaxial layer are obtained.