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We propose a dynamic threshold voltage junctionless tunnel FET(DT-JLTFET) in which the threshold voltage can be dynamically adjusted,resulting in higher ON-current.Through 2D numerical simulations,it is presented that the threshold voltage in the DT-JLTFET can be adjusted by applying a voltage to the adjust gate.The impact of the threshold voltage shift on the overall performance of the device is also studied.A comparison is made between the dynamic threshold voltage characteristics of a silicon JLTFET and a Si0.7Ge0.3 source JLTFET.
We propose a dynamic threshold voltage junctionless tunnel FET (DT-JLTFET) in which the threshold voltage can be dynamically adjusted, resulting in higher ON-current.Through 2D numerical simulations, it is presented that the threshold voltage in the DT- JLTFET can be adjusted by applying a voltage to the adjust gate. The impact of the threshold voltage shift on the overall performance of the device is also studied. A comparison is made between the dynamic threshold voltage characteristics of a silicon JLTFET and a Si 0.7 Ge 0.3 source JLTFET.