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一、引言碰撞雪崩渡越时间二极管(IMPATT)是当二极管反向偏置到雪崩击穿状态时,由于存在载流子的碰撞电离和渡越时间两个物理过程,而使交流电流和交流电压间产生了大于90°的相位延迟,二极管显示出交流负阻特性,从而把直流功率转换到射频功率的一种微波器件。这种器件是1958年里德首先在理论上提出来的,但直到1965年才第一次在硅p-n结上实验观察到微波振荡。作为一种新的固体微波功率源,雪崩器件受到了极大的重视。近年来器件在工作频率、输出功率、转换效率、电路应用等方面都有了很大发展,器件性能有了极大提高。
I. INTRODUCTION IMPAST IMPACT (IMPACT) is the physical process of impact ionization and transit time of carriers when the diode is reverse-biased to the avalanche breakdown condition, so that the AC current and the AC voltage Between the phase delay greater than 90 ° produced, the diode shows AC negative resistance characteristics, which will convert the DC power to RF power of a microwave device. The device was first proposed by Reed in 1958, but microwave oscillations were not observed experimentally on silicon p-n junctions for the first time in 1965. As a new solid microwave power source, avalanche devices have received tremendous attention. In recent years, the device has great development in working frequency, output power, conversion efficiency, circuit application and other aspects, and the device performance has been greatly improved.