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利用分子束外延系统在Si(001)衬底上制备了单晶Tm_2O_3薄膜,利用X射线光电子能谱研究了Tm_2O_3相对于Si的能带偏移.得出Tm_2O_3相对于Si的价带和导带偏移分别为3.1 eV±0.2 eV和1.9 eV±O.3 eV并得出了Tm_2O_3的禁带宽度为6.1 eV±0.2 eV.研究结果表明Tm_2O_3是一种很有前途的高κ栅介质候选材料.
Single-crystal Tm 2 O 3 thin films were prepared on Si (001) substrates by using molecular beam epitaxy system. The energy band shift of Tm 2 O 3 relative to Si was studied by X-ray photoelectron spectroscopy. The valence band and conduction band of Tm 2 O 3 with respect to Si The results show that the band gap of Tm_2O_3 is 6.1 eV ± 0.2 eV and the band gap is 3.1 eV ± 0.2 eV and 1.9 eV ± 0.3 eV, respectively. The results show that Tm_2O_3 is a promising candidate for high-κ gate dielectric .