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本文结合笔者的科研,论述了离子注入在Power MOS FET制作中的应用,并指出:由于离子注入较之扩散具有一系列优点,因此,离子注入不仅在制作Power MOS FET中作用巨大,而且在其他功率器件中的应用也将越来越广泛。
Based on the author’s research, this paper discusses the application of ion implantation in the fabrication of Power MOS FET. It also points out that ion implantation has a great effect not only in making Power MOS FET, but also in other The application of power devices will also be more extensive.