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A dual conduction paths segmented anode lateral insulated-gate bipolar transistor(DSA-LIGBT) which uses triple reduced surface field(RESURF) technology is proposed. Due to the hybrid structures of triple RESURF LDMOS(T-LDMOS) and traditional LIGBT, firstly, a wide p-type anode is beneficial to the small shift voltage.VST) and low specific on-resistance(Ron;sp) when the anode voltage(VA) is larger than VST. Secondly, a wide ntype anode and triple RESURF technology are used to get a low Ron;spwhen VAis less than VST. Meanwhile, it can accelerate the extraction of electrons, which brings a low turn-off time(Toff). Experimental results show that: VST is only 0.9 V, Ron;sp(Ron Area) are 11.7 and 3.6 mm2when anode voltage VAequals 0.9 and 3 V, respectively,the breakdown voltage reaches to 800 V and Toffis only 450 ns.
Due to the hybrid structures of triple RESURF LDMOS (T-LDMOS) and traditional LIGBT, first, A wide p-type anode is beneficial to the small shift voltage. VST) and low specific on-resistance (Ron; sp) when the anode voltage (VA) is larger than VST. Secondly, a wide ntype anode and triple RESURF technology are used to get a low Ron; spwhen VAis less than VST. It can accelerate the extraction of electrons, which brings a low turn-off time (Toff). Experimental results show that: VST is only 0.9 V, Ron; sp Ron Area) are 11.7 and 3.6 mm2when anode voltage VAequals 0.9 and 3 V, respectively, the breakdown voltage reaches 800 V and Toffis only 450 ns.