High Responsivity Organic Ultraviolet Photodetector Based on NPB Donor and C_(60) Acceptor

来源 :Chinese Physics Letters | 被引量 : 0次 | 上传用户:diahou
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We report fabrication and characterization of organic heterojunction UV detectors based on N,N’-bis(naphthalen-1-yl)-N,N’-bis(phenyl) benzidine(NPB) and fullerene C_(60).The effects of different thicknesses of NPB and Ceo layers are studied and compared.Notably,the optimal thicknesses of electron acceptor Ceo and electron donor NPB are 40 nm and 80 nm,respectively.The J-V characteristic curves of the device demonstrate a three-orderof-magnitude difference when illuminated under a 350 nm UV light and in the dark at —0.5 V.The device exhibits high sensitivity in the region of 320-380 nm with the peak located around 350 nm.Especially,it shows excellent photo-response characteristic with a responsivity as high as 315mA/W under the illumination of 192 μ W·cm~(-2)350nm UV light at —5V.These results indicate that the NPB/C_(60) heterojunction structure device might be used as low-cost low-voltage UV photodetectors. We report fabrication and characterization of organic heterojunction UV detectors based on N, N’-bis (naphthalen-1-yl) -N, N’-bis (phenyl) benzidine (NPB) and fullerene C_ (60). The effects of different thicknesses of NPB and Ceo layers are studied and compared. Notably, the optimal thicknesses of electron acceptor Ceo and electron donor NPB are 40 nm and 80 nm, respectively. The JV characteristic curves of the device demonstrate a three-order of-magnitude difference when illuminated under a 350 nm UV light and in the dark at -0.5 V. The device exhibits high sensitivity in the region 320-380 nm with the peak located around 350 nm. Especially, it shows excellent photo-response characteristic with a responsivity as high as 315 mA / W under illumination at 192 μW · cm -2 350 nm UV light at -5 V. These results indicates that the NPB / C 60 heterojunction structure might be used as a low-cost low-voltage UV photodetectors.
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