利用霍尔离子源辅助电子束蒸发方法,分别在反应烧结碳化硅(RB-SiC)和常压烧结碳化硅(Sintered SiC,S-SiC)基底材料上制备了Si改性膜层,并进行了相关性能测试和分析。经过表面改性,两种基底的表面粗糙度(rms)大幅地降低,镀银后的反射率有较大地提高,基底表面光学质量已满足工程应用要求。在相同工艺条件下,S-SiC基底改性后效果好于RB-SiC基底的情况,主要是因为Si膜在两种基底表面生长情况不同所致。 The Hall-source-assisted electron beam evaporation method was used to fabricate Si-modified films on RB-SiC and S-SiC substrates respectively. Related performance testing and analysis. After surface modification, the surface roughness (rms) of the two substrates is greatly reduced, the reflectivity after silver plating is greatly increased, and the optical quality of the substrate surface has met the requirements of engineering applications. Under the same process conditions, the effect of S-SiC substrate modification is better than RB-SiC substrate, mainly due to the different growth of Si film on the two substrate surfaces.