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随着红外焦平面技术的发展,红外探测器探测波段已由单波段变为双色及四色波段,半导体元件的封装数量由最初的数十个发展到数百万个,I/O输出密度不断增大,传统微互联技术如引线键合技术、载带自动焊技术等已根本无法满足器件要求。倒装焊技术以其封装尺寸小、互联密度高、生产成本低的特点越来越受到人们的亲睐。倒装互连工艺主要包括:UBM制备、铟膜沉积、回流成球、倒压焊、填充背底胶。介绍了各工艺步骤的发展状况,并对铟膜沉积、铟柱增高工艺进行详细阐述。
With the development of infrared focal plane technology, the detection range of infrared detectors has changed from single-band to two-color and four-color bands. The number of packages of semiconductor components has been increased from tens to millions and the I / O output density continues to rise Increase, the traditional micro-interconnect technology such as wire bonding technology, with automatic welding technology has been unable to meet the device requirements. Flip-chip welding technology with its small package size, high interconnect density, low-cost production features more and more people’s pro-gaze. Flip-chip interconnect processes include: UBM preparation, indium film deposition, back into the ball, pressure welding, filling the back of the plastic. The development of each process step is introduced, and the indium film deposition and indium column increase process are described in detail.