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The phase change material of Ge-doped Sb_2 Te_2 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb_2 Te_2.Ge_(0.11)Sb_2Te_3 alloys are considered to be a potential candidate for phase change random access memories,as proved by a higher crystallization temperature,a better data retention ability,and a faster switching speed in comparison with those of Ge_2Sb_2Te_5.In addition,Ge_(0.11)Sb_2Te_3 presents extremely rapid reverse switching speed(10 ns),and up to 10~5 programming cycles are obtained with stable set and reset resistances.
The phase change material of Ge-doped Sb_2 Te_2 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb_2 Te_2.Ge_ (0.11) Sb_2Te_3 alloys are considered to be potential potential for phase change random access memories, as proven by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge_2Sb_2Te_5.In addition, Ge_ (0.11) Sb_2Te_3 presents extremely rapid reverse switching speed (10 ns), and up to 10 ~ 5 programming cycles are obtained with stable set and reset resistances.