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在115.2K到162.3K的温度范围内,用电容瞬态技术研究了P-N结电场对硅中金施主中心空穴热发射率的影响.测量结果表明电场对热发射率有很强的增强作用,这种作用强烈地依赖于温度.用电场降低极化势垒效应可以解释这种作用.极化势垒的形式为V(r)=-Ar~(-4),实验定出上述温度范围的A从8.8 × 10~(-27)变到1.1×10~(-27)eVcm~4.在测量方法方面,首次考虑了空间电荷区边界层对热发射率-电场关系测量结果的影响,提出了修正这种影响的具体方法.
The effect of PN junction electric field on the thermal emissivity of gold donor holes in silicon was investigated by capacitance transient technique in the temperature range of 115.2K to 162.3K.The measurement results show that the electric field has a strong enhancement on the thermal emissivity, This effect is strongly dependent on the temperature, which can be explained by the fact that the electric field decreases the polarization barrier effect. The polarization barrier has the form V (r) = - Ar ~ (-4) (A) from 8.8 × 10 ~ (-27) to 1.1 × 10 ~ (-27) eVcm ~ 4.In the measurement method, the influence of space charge zone boundary layer on the measurement results of the relationship between thermal emissivity and electric field was considered for the first time, Proposed to correct this effect of the specific method.