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本专利介绍一种用于测量诸如温度之类参数的光致发光方法,它可以在器件制造期间在加工腔体内的外延生长气相或真空环境中测量温度。该方法的工作步骤是这样的:将一个Ⅲ—Ⅴ族直接带隙传感元件(24)放在腔体内的器件旁
This patent describes a photoluminescence method for measuring parameters such as temperature that can measure temperature in an epitaxial growth vapor or vacuum environment within a process chamber during device fabrication. The working procedure of the method is such that a group III-V direct bandgap sensing element (24) is placed next to the device in the cavity