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Using NH3 as nitrogen source gas,N-doped ZnO(ZnO:N) thin films in c-axis orientation were deposited on glass substrates by radio frequency magnetron sputtering at room temperature.The ZnO:N thin films display significant increase of resistivity and decrease of photoluminescence intensity.As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor.The fabricated devices on glasses demonstrate typical field effect transistor characteristics.
Using NH3 as nitrogen source gas, N-doped ZnO (ZnO: N) thin films in c-axis orientation were deposited on glass substrates by radio frequency magnetron sputtering at room temperature. ZnO: N thin films display significant increase of resistivity and decrease of photoluminescence intensity. As-grown ZnO: N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. fabricated device on glasses demonstrates typical field effect transistor characteristics.