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InAs/GaSb type-Ⅱ superlattices (SLs),Zn-doped GaSh and Si-doped InAs were grown on semi-insulating (001) GaAs substrates by metalorganic chemical vapor deposition.X-ray diffraction reveals that complete strain compensation between the SLs and the GaSb buffer layer is achieved in our SL samples.The relationship between the hole concentration p in GaSb and the diethylzinc (DEZn) flow rate is poc[DEZn]0.57.The electron concentration in InAs does not show good linearity with the SiH4 flow rate.The growth rate of the p-GaSb epilayer is decreased as the DEZn mole fraction increases,while the growth rate of the n-InAs epilayer is weakly dependent on the SiH4 flow rate.