【摘 要】
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A novel silicon controlled rectifier (SCR) with high holding voltage (Vh) for electrostatic discharge (ESD) protection is proposed and investigated in this pape
【机 构】
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State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Scien
论文部分内容阅读
A novel silicon controlled rectifier (SCR) with high holding voltage (Vh) for electrostatic discharge (ESD) protection is proposed and investigated in this paper.The proposed SCR obtains high Vh by adding a long N+ layer (LN+) and a long P+ layer (LP+),which divide the conventional low voltage trigger silicon controlled rectifier (LVTSCR) into two SCRs (SCRI:P+/Nwell/Pwell/N+ and SCR2:P+/LN+/LP+/N+) with a shared emitter.Under the low ESD current (IESD),the two SCRs are tued on at the same time to induce the first snapback with high Vh (Vh1).As the IESD increases,the SCR2 will be tued off because of its low current gain.Therefore,the IESD will flow through the longer SCR1 path,bypassing SCR2,which induces the second snapback with high Vh (Vh2).The anti-latch-up ability of the proposed SCR for ESD protection is proved by a dynamic TLP-like (Transmission Line Pulse-like) simulation.An optimized Vh2 of 7.4 V with a maximum failure current (It2) of 14.7 mA/μm is obtained by the simulation.
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