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在分析了单电子晶体管(SET)的I-V特性后,通过对SET背景电荷的设置,使之具有类似PMOS或NMOS的电学特性;同时将传输电压开关理论引入到SET的电路设计中,并用单栅极SET实现了该理论的基本运算电路.随后以异或门和一位比较器为例,利用这些基本运算电路,进行了基于SET的开关级电路设计.最后,利用Pspice软件验证了所设计的电路逻辑功能正确,设计方法可行;电路的输入输出高低电平一致,具有良好的电压兼容性,易于级联.仿真结果表明,与基于互补结构设计的SET电路相比,基于开关级设计的SET电路具有结构简单、功耗低、延迟小的特点.
After analyzing the IV characteristic of the single electron transistor (SET), the background charge of the SET is set to have the electrical characteristics similar to PMOS or NMOS. At the same time, the theory of the transmission voltage switch is introduced into the circuit design of the SET, Extreme SET realizes the basic operation circuit of this theory.And then uses the XOR gate and a comparator as examples to design the switching circuit based on SET by using these basic arithmetic circuits.Finally, using Pspice software to verify the designed The circuit logic function is correct and the design method is feasible. The circuit’s input and output levels are consistent, with good voltage compatibility and easy cascade. Simulation results show that, compared with the SET circuit based on the complementary structure design, The circuit has the characteristics of simple structure, low power consumption and small delay.