论文部分内容阅读
,Crystallization Characteristics of SiNx-Doped SbTe Films for Phase Change Memory
【机 构】
：
Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Institute of
【出 处】
：
中国物理快报（英文版）
【发表日期】
：
2012年3期
其他文献
A new lateral double diffused MOS (LDMOS) transistor with a double epitaxial layer formed by an n-type substrate and a p-type epitaxial layer is reported (DEL L
期刊
We present a quantum key distribution scheme using a weak-coupling cavity QED regime based on quantum dense coding.Hybrid entanglement states of photons and ele
期刊
,Effect of Minor Co Substitution for Ni on the Glass Forming Ability and Magnetic Properties of Gd55
Element substitution is usually used to improve the glass forming ability (GFA) and magnetic properties of alloys.We obtain Gd55Al20Ni20Co5 bulk metallic glass
期刊
Based on the recently developed ptychographical iterative engine (PIE),we suggest a lens assisted microscopy to realize quantitative phase imaging without using
期刊