欲提高光刻的分辨率,除增大镜头的数值孔径和缩短曝光波长外,还得恢复因工艺实践不当所失去的分辨率。可能的改进手段是消除掩模与芯片间的振动,增大抗蚀剂的反差和采用多层抗蚀剂工艺。为了定量地评价这些改进,对振动和抗蚀剂反差的改进作了模拟研究。 To increase the resolution of the lithography, in addition to increasing the numerical aperture of the lens and shortening the exposure wavelength, the resolution lost due to improper process practice has to be restored. Possible improvements are to eliminate the vibration between the mask and the chip, increase the contrast of the resist and adopt a multi-layer resist process. To quantitatively evaluate these improvements, a simulation study of the improvement in vibration and resist contrast was conducted.