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通过实验研究了部分耗尽SOI NMOSFET总剂量辐射效应与辐射时的偏置状态的关系,实验结果表明TG(Transition Gate)是最恶劣的偏置状态。随后分别用MEDICI模拟软件和数值模型模拟掩埋氧化层中的电场强度与空穴俘获率。模拟结果合理地解释了实验结果,掩埋氧化层中的高电场和高空穴俘获率是TG为最恶劣偏置状态的主要原因。
The relationship between the total dose radiation effect of SOI NMOSFET and the bias state during radiation is experimentally studied. The experimental results show that TG (Transition Gate) is the worst bias state. Then the MEDICI simulation software and numerical model were respectively used to simulate the electric field strength and the hole trapping rate in the buried oxide layer. The simulation results reasonably explain the experimental results. The high electric field and the high hole-trapping rate in the buried oxide layer are the main reasons for the worst-case TG bias.