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本文给出n型GaAs(100)衬底上热壁外延生长的Znse薄膜室温喇曼散射分析.Znse纵光学(LO)声子喇曼峰的线宽测量表明作者已在GaAs(100)衬底上用封闭式热壁外延法长出了高质量ZnSe单晶膜.较差质量外延膜在背散射喇曼谱中出现的横光学(TO)声子峰被归之于外延膜生长过程中与孪生有关的微观取向错误的出现.首次在意到GaAs表面化学腐蚀处理使n型GaAs的LO声子-等离子激元耦合模喇曼强度有成倍提高,并证明这是因为化学腐蚀使GaAs表面氧化层厚度减小,增加了入射激光束在GaAs基质材料中的穿透深度.
In this paper, the temperature-Raman scattering of ZnSe films grown on hot-wall epitaxial layers over n-type GaAs (100) substrates is investigated. The line width measurements of the Raman peaks of the Znse longitudinal optical (LO) phonons show that the GaAs (100) High quality ZnSe single crystal films were grown by closed thermal wall epitaxy.The transverse optical (TO) phonon peaks of the poor quality epitaxial films in backscattered Raman spectra were attributed to Twin-related misorientation for the first time.We first noticed that the surface chemical etching of GaAs doubled the LO phonon-plasmon coupling mode Raman intensity of n-type GaAs and proved that this was due to the chemical corrosion that oxidized the surface of GaAs The layer thickness decreases, increasing the penetration depth of the incident laser beam in the GaAs host material.