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用x射线衍射技术和x射线形貌技术,测定了具有组分梯度层的气相外延生长的Ga_(1-x)In_xAs/GaAs结构的组分、组分梯度、晶格失配、晶格失配应力和外延层的晶面倾斜角,以及曲率半径和外延层中的平均应力。观察了外延层中的位错,特别是失配位错的运动情况。发现外延层晶格不但发生较大的形变,而且外延层晶格相对于衬底晶格产生较大的错向(晶面倾斜),组分梯度或晶格失配变化率对外延层的缺陷将产生较大影响,若选用适当组分梯度的过渡层,可将位错扫出外延层,并使最后的固定组分层呈低位错区。
The composition, composition gradient, lattice mismatch, lattice mismatch of Ga_ (1-x) In_xAs / GaAs structures grown by vapor phase epitaxy with component gradient were measured by X-ray diffraction and X-ray topography With stress and epitaxial layer plane tilt angle, and the radius of curvature and the average stress in the epitaxial layer. The dislocations in the epitaxial layer, especially the misfit dislocations, were observed. It is found that not only the larger deformation occurs in the epitaxial layer lattice, but also the larger the crystal lattice orientation of the epitaxial layer lattice relative to the substrate (crystal plane tilt), the change of component gradient or lattice mismatch to the epitaxial layer defects Will have a greater impact, if the choice of the gradient component of the transition layer, the dislocations can be swept out of the epitaxial layer, and the final fixed component layer was dislocation zone.