金属-半导体的欧姆接触无论在半导体的器件制造还是半导体物理和材料的性能研究方面都是极其重要的.接触性能的好坏直接影响着器件的质量和材料、物理的研究.接触电阻率ρ_c是标志金属-半导体欧姆接触优劣的一个重要参量.线形传输线模型是测量ρ_c的常用方法之一,对于绝缘衬底上的薄半导体层(例如高阻层上外延、扩散、离子注入 The ohmic contact between metal and semiconductor is very important both in semiconductor device manufacturing and in semiconductor physics and material performance research.The quality of contact has a direct impact on the quality of the device and the material and physical research.The contact resistivity ρ_c is It is one of the most important parameters to measure the ohmic contact between metal and semiconductor.The linear transmission line model is one of the commonly used methods to measure ρ_c. For the thin semiconductor layer on the insulating substrate (for example, epitaxy, diffusion, ion implantation