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本文报导在Ⅱ型应变层InAs/GaSb超晶格材料上研制长波红外焦平面列阵工作的进展。美国雷神视觉系统公司和喷气推进实验室已研制成功截止波长为10至12μm的此类器件。这种器件的像元是通过湿蚀刻以及用等离子体淀积二氧化硅来进行表面钝化而形成的。列阵则是通过铟柱焊接与硅读出集成电路混成起来的。本文介绍对列阵的测试结果以及对分立二极管进行的电流-电压特性分析。雷神视觉系统公司和喷气推进实验室的研究人员发现,当温度低于70K时,漏泄电流在零偏压下受控于产生-复合效应,而在反向偏压下则受控于陷阱辅助隧穿效应。虽然其他作者已验证了Ⅱ型超晶格器件的短波红外和中波红外成像性能,但在2006年之前,还没有一个人能验证这种器件在长波红外波段内的成像性能。雷神公司和喷气推进实验室利用像元尺寸为30μm的256×256元列阵以78K的操作温度同时获得了静物图像和视频图像,在此温度下,这种列阵具有高操作性和10.5μm的截止波长。
This paper reports the progress in the development of long wave infrared focal plane arrays on type-II strained InAs / GaSb superlattice materials. Raytheon Vision Systems and Jet Propulsion Laboratory have successfully developed such devices that cut off wavelengths from 10 to 12 μm. The picture elements of this device are formed by wet etching and surface passivation with plasma deposited silicon dioxide. The array is integrated by indium stud soldering and silicon readout integrated circuits. This article describes the test results for the array and the current-voltage characteristics of discrete diodes. Researchers at Raytheon Vision Systems Inc. and Jet Propulsion Laboratory found that leakage current was controlled by the generation-recombination effect at zero bias at temperatures below 70K and controlled by trap-assisted tunneling at reverse bias Wear effect. Although other authors have validated SWIR and MIR imaging performance for type II superlattice devices, no one was able to verify the imaging performance of this device in the longwave IR band until 2006. Raytheon and Jet Propulsion Laboratory used a 256x256 cell array with a cell size of 30 μm to obtain still image and video images simultaneously at an operating temperature of 78 K at this temperature with high operability and 10.5 μm The cut-off wavelength.