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完成了对AlGaN/GaN高电子迁移率晶体管(HEMT)的结构设计及器件物理特性的验证等工作。使用TCAD软件完成了该器件直流特性及微波特性等性能的模拟。建立该器件的极化效应模型是本项研究的重点。完成了对异质结条件下诸多模型参数的筛选及修正,得到了符合理论的模拟结果。器件特性的验证与优化基于势垒层厚度h的变化展开,研究结果显示:漏极电流随h值的增加而增加,当h值超过40nm时,因二维电子气浓度上升缓慢而使漏极电流趋于饱和;跨导随h值的减小而增大,h每降低10nm,跨导约增大37mS/mm;势垒层厚度对高频特性的影响较小。
Completed the structural design of AlGaN / GaN high electron mobility transistor (HEMT) and verify the physical properties of the device. The TCAD software was used to simulate the DC characteristics and microwave characteristics of the device. The establishment of the device polarization effect model is the focus of this study. The selection and correction of many model parameters under the heterojunction condition were completed, and the simulation results in accordance with the theory were obtained. The verification and optimization of device characteristics are based on the change of barrier layer thickness h. The results show that the drain current increases with the increase of h value. When the value of h exceeds 40 nm, the drain The current tends to be saturated; transconductance increases with the decrease of h value, every time h decreases 10nm, the transconductance increases by 37mS / mm; the influence of barrier layer thickness on high frequency characteristics is small.