分子束外延生长CdTe/HgCdTe非对称多量子阱,用反射高能电子衍射监测生长过程,并用x射线衍射测定其结构参数。通过对吸收光谱的研究并结合包络函数计算,发现该结构子带吸收很强,吸收限在9～11μm。 CdTe / HgCdTe asymmetric multiple quantum wells were grown by molecular beam epitaxy, the growth process was monitored by high energy electron diffraction and the structural parameters were measured by X-ray diffraction. By studying the absorption spectrum and combining with the envelope function, it is found that the subbands of the structure have strong absorption and the absorption limit is 9 ~ 11μm.