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在 GaN 中注入 Si~-和 Mg~+/P~+之后,在约1100℃下退火,分别形成 n 区和 p 区。每种元素的注入剂量为5×10~(14)cm~(-2)时,Si 的载流子激活率为93%,Mg的是62%。相反地,在原 n 型或 p 型 GaN 中注入 N~+,然后在约750℃下退火,能形成高阻区(>5×10~9Ω/□)。控制这些注入隔离材料电阻率的深能态激活能在0.8～0.9eV 范围内,这些工艺参数适用于各种不同的 GaN 基电子和光器件。
After implanting Si ~ - and Mg ~ + / P ~ + in GaN, annealing is performed at about 1100 ° C to form n and p regions, respectively. When each element is implanted at a dose of 5 × 10 ~ (14) cm ~ (-2), the carrier mobility of Si is 93% and that of Mg is 62%. Conversely, implanting N + in the original n-type or p-type GaN and annealing at about 750 ° C results in a high resistance region (> 5 × 10 -9 Ω / □). The deep-state activation energy that controls the resistivity of these implanted isolation materials is in the 0.8-0.9 eV range and these process parameters are suitable for a wide range of GaN-based electronics and opto-devices.