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在传统带隙基准的基础上,利用曲率补偿和预稳压结构,设计了一种高性能带隙基准源。利用MOS管在亚阈值区域时的指数特性,对基准电压进行曲率补偿,使用预稳压结构提高电源抑制能力。该电路结构简单,实现了较宽的电压输入范围(2.5~10V)。在UMC 0.25μm BCD工艺上进行仿真,结果表明,电源电压为2.5~10V,基准电压变化峰峰值为142μV;温度在-40℃~150℃内,电路的温度系数为8.0×10~(-7)/℃;低频时,电源抑制比为-95dB;电源电压为5V时,静态功耗电流为10.4μA。
Based on the traditional bandgap reference, a high performance bandgap reference source is designed by using curvature compensation and pre-regulator structure. Using the exponential characteristics of the MOS transistor in the sub-threshold region, curvature compensation is performed on the reference voltage, and the power supply suppression capability is improved by using the pre-regulator structure. The circuit structure is simple, to achieve a wide range of voltage input (2.5 ~ 10V). The simulation results show that the power supply voltage is 2.5 ~ 10V and the peak-to-peak variation of the reference voltage is 142μV. The temperature coefficient of the circuit is between 8.0 × 10 ~ (-7) and -40 ℃ ~ 150 ℃ ) / ° C; at low frequencies, the power supply rejection ratio is -95dB; at a supply voltage of 5V, the quiescent current consumption is 10.4μA.