提出了一种新的 PMMA/ PMGI/ PMMA三层胶复合结构 ,通过一次对准和电子束曝光、多次显影在 In PPHEMT材料上制作出高成品率的 T型纳米栅 .在曝光显影条件变化 2 0 %的情况下 ,In P HEMT成品率达到 80 %以上 ;跨导变化范围在 5 90～ 6 10 m S/ mm,夹断电压为 - 1.0～ - 1.2 V,器件的栅长分布均匀 .这种新的结构工艺步骤少 ,工艺宽容度大 ,重复性好 ,大大提高了纳米栅器件的成品率 A new three-layer composite structure of PMMA / PMGI / PMMA was proposed, which was developed on In PPHEMT material by one-time alignment and electron beam exposure to fabricate high-yield T-shaped nanowires. After exposure and development conditions were changed In 20%, the yield of In P HEMT reaches more than 80%, the transconductance varies from 5 90 to 6 10 m S / mm, the pinch-off voltage is -1.0 to -1.2 V, and the gate length of the device is evenly distributed. The new structure of the process steps less, process tolerance, repeatability, greatly improving the yield of nano-gate devices