光学光刻是目前超大规模集成电路(VLSI)制备中主要的微米和亚微米的图形加工技术,这一技术将继续保持其主导地位成为90年代VLSI发展的关键。本文综述了近年来光学光刻工艺的发展,主要介绍了G线(436nm)、Ⅰ线(365nm)和准分子激光光刻的现状,并对实现高的光学光刻分辨率所必须解决的透镜设计、套准精度和像场面积等问题作了详细描述。最后展望了发展方向、 Optical lithography is currently the dominant micron and sub-micron patterning technology in VLSI fabrication. This technology will continue to maintain its dominance as the key to VLSI development in the 1990s. In this paper, the development of optical lithography in recent years is reviewed. The current situation of G line (436nm), I line (365nm) and excimer laser lithography are introduced. And the lens which must be solved to achieve high optical lithography resolution Design, registration accuracy and image field area and other issues described in detail. Finally, the development direction,