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采用水热法在p-Si(111)衬底上生长出六棱ZnO微管,在空气中进行了300～600℃不同温度的热处理,并用XRD、XPS、PL谱研究了热处理对ZnO微管的结构、发光性能的影响。结果表明经过热处理后,ZnO微管的晶体质量显著改善。室温下的光致发光测试显示,在可见发射几乎消失的情况下,近带边发射的强度显著增大。与原位生长的ZnO微管相比,在泵浦密度为28kW/cm2时,热处理400℃的样品在近紫外区产生一个新的发射峰P。通过验证发射峰A与P之间的相对能量位置,认为新发射峰P可能是由激子-激子碰撞引起的。
The hexagonal ZnO microtubes were grown on p-Si (111) substrate by hydrothermal method and heat treated at 300-600 ℃ in air at different temperatures. The effects of heat treatment on the growth of ZnO microtubes The structure of the luminescent properties. The results show that after heat treatment, ZnO microtubes significantly improve the crystal quality. Photoluminescence measurements at room temperature show that the intensity of the near-band edge emission increases significantly when the visible emission almost disappears. Compared with ZnO microtubes grown in situ, a 400 ℃ heat-treated sample produced a new emission peak P in the near UV region at a pumping density of 28kW / cm2. By verifying the relative energy positions between the emission peaks A and P, it is considered that the new emission peak P may be caused by the exciton-exciton collision.