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利用自感应耦合等离子(ICP)蚀刻机进行硅深层反应离子刻蚀,得到了几微米宽的狭槽,其轮廓通常为正锥形,即蚀刻槽的宽度随着蚀刻深度的增大而减小.然而,对一个宽槽来说,由于等离子区内边界层的变形,其蚀刻宽度会随着蚀刻深度的增加而增加.在许多应用中,硅蚀刻轮廓侧面的垂直状况是一个关键性问题.叙述了分离式垂直镜的加工过程;研究了影响蚀刻轮廓的各种重要参数.经过引入多步制法与优化激励源、基底偏压源及加工压力,减小了等离子区边界层内的变形,改善了轮廓的蚀刻状况.得到的结果为:120μm高垂直微镜垂直度为89.7°,200μm高垂直微镜垂直度为89.3°.
In-depth reactive ion etching of silicon using a self-inductively coupled plasma (ICP) etching machine results in a few micrometer wide slot having a generally positive taper profile, ie, the width of the etched trench decreases as the depth of etch increases However, for a wide trench, the etch width increases as the depth of etch increases due to the deformation of the boundary layer in the plasma region.In many applications, the vertical profile of the silicon etched profile is a critical issue. Described the process of the separation of the vertical mirror and studied the various important parameters that affect the etching profile.Through the introduction of multi-step method and optimize the excitation source, the substrate bias source and processing pressure, reducing the plasma boundary layer deformation , The etching condition of the profile is improved.The results are as follows: the verticality of 120μm high vertical micromirrors is 89.7 °, and the verticality of 200μm high vertical micromirrors is 89.3 °.